S00200 - SEMI S2 - Environmental, Health, and Safety Guideline for Semiconductor Manufacturing Equipment Revision:SEMI S2-0706e - Superseded This Practice is suitable for

This Practice is suitable for use in evaluating silicon grown in either the [111] or the [100] direction and doped either p- or n-type with resistivity greater than 0

This is a supplement to that documentation

Nanotopography features are characterized by their height variation within an area

and installation of equipment

Originally published June 2000

S00200 - SEMI S2 - Environmental, Health, and Safety Guideline for Semiconductor Manufacturing Equipment Revision:SEMI S2-0706e - Superseded This Practice is suitable for* This Safety Guideline has the option to purchase the Current document with a redline document (Current + Redline). The redline document is included with the Current document as a comparison tool to help identify changes that have been made between the Current version and the previous version (Superseded). If differences should exist between the redline document and the Current document, the Current version is the official and authoritative version.